Method for fabricating a transistor structure

Details Method for fabricating a transistor structure Method for fabricating a transistor structure

2011-08-23

2011-08-23

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

C438S202000, C438S234000, C438S309000, C438S353000, C257SE21537, C257SE29034, C257SE21608

Reexamination Certificate

active

08003475

ABSTRACT:
A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.

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Translation of Notice of Reasons for Refusal, Dated Feb. 26, 2008, pp. 1-12.
Translation of Notice of Reasons for Refusal, Dated Jul. 15, 2008, pp. 1-5.

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