Method for fabricating a transistor gate with a T-like structure

Details Method for fabricating a transistor gate with a T-like structure Method for fabricating a transistor gate with a T-like structure

1998-12-04

2000-06-20

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438578, 438182, 438303, 438572, H01L 2128

Patent

active

060777613

ABSTRACT:
A method for fabricating a field effect transistor (FET) with a T-like gate structure includes forming a silicon nitride layer over a silicon substrate and patterning it to form an opening that exposes the substrate. A dielectric layer is formed on a lower portion of each side-wall of the opening so that the opening has a T-like free space. A doped polysilicon layer fills the T-like free space through only one deposition. After performing a planarization on the doped polysilicon layer, a titanium metal layer is formed over the substrate. A self-aligned titanium silicide is formed over the substrate other than the dielectric layer surface through a rapid thermal process (RTP). A selective etching process is performed to remove the remaining titanium metal layer. After removing the dielectric layer a RTP is performed again to reform the crystal structure of the titanium silicide layer so as to reduce its resistance. A T-like gate structure is formed.

REFERENCES:
patent: 5646435 (1997-07-01), Hsu et al.
patent: 5688704 (1997-11-01), Liu
patent: 5744395 (1998-04-01), Shue et al.
Wolf, S. Silicon Processing for the VLSI Era, vol. 2: Process Integration. Lattice Press, 1990. pp. 67-69, 556-557, 1990.

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