Method for fabricating a titanium resistor

Details Method for fabricating a titanium resistor Method for fabricating a titanium resistor

1996-05-09

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Resistor

438385, 438643, 438648, 438656, H01L 2120

Patent

active

058997245

ABSTRACT:
According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.

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patent: 4786612 (1988-11-01), Yau et al.
patent: 5030588 (1991-07-01), Hosaka
patent: 5175114 (1992-12-01), Ono et al.
patent: 5254493 (1993-10-01), Kumar
patent: 5441914 (1995-08-01), Taft et al.

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