Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Chemically responsive
Reexamination Certificate
2005-12-13
2005-12-13
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Chemically responsive
C438S048000
Reexamination Certificate
active
06974716
ABSTRACT:
A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.
REFERENCES:
patent: 4739380 (1988-04-01), Lauks et al.
patent: 5607566 (1997-03-01), Brown et al.
patent: 6218208 (2001-04-01), Chou et al.
patent: 6236075 (2001-05-01), Hsiung et al.
patent: 6897081 (2005-05-01), Hsiung et al.
Ce Lei Zhen
Chin Yuan-Lung
Chou Jung-Chuan
Chung Wen-Yaw
Hsiung Stephen S. K.
Chung Yuan Christian University
Duong Khanh
Thomas Kayden Horstemeyer & Risley
Zarabian Amir
LandOfFree
Method for fabricating a titanium nitride sensing membrane... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a titanium nitride sensing membrane..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a titanium nitride sensing membrane... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3472680