Method for fabricating a thin film semiconductor device

Details Method for fabricating a thin film semiconductor device Method for fabricating a thin film semiconductor device

1997-02-13

1999-10-26

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427534, 427535, 4272553, 427309, 438778, 438786, B05D 306, H01L 2978

Patent

active

059724374

ABSTRACT:
To promote the characteristic of an interface between a gate insulating film and a semiconductor and control the threshold voltage, in forming the insulating film, a surface on which the insulating film is to be formed is previously exposed to activated oxygen and thereafter, the insulating film is formed on the surface, or in steps of manufacturing a thin film transistor, the insulating film is formed with monosilane, dinitrogen monoxide and oxygen as raw materials.

REFERENCES:
patent: 4837185 (1989-06-01), Yau et al.
patent: 5395804 (1995-03-01), Ueda
patent: 5550397 (1996-08-01), Lifshitz et al.
patent: 5576071 (1996-11-01), Sanahu
patent: 5614270 (1997-03-01), Yeh et al.
patent: 5624873 (1997-04-01), Fonash
Asai et al, Abstracts of the 1992 International Conference On Solid State Devices and Materials, pp. 55-57 no month data.

Affiliated with

Also associated with

Rating

Method for fabricating a thin film semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a thin film semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a thin film semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-761292