Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-05-23
1999-12-21
Wilczewski, Mary
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438155, H01L 2100, H01L 2184, H01L 2712
Patent
active
06004831&
ABSTRACT:
A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate interconnections. The surface of the first metallization layer is oxidized by anodic oxidation to form an insulating coating on the surface of the first metallization layer. A second metallization layer becoming source and drain electrodes or conductive interconnections is then formed on the insulating coating directly or via an interlayer insulator. An improvement in the production yield and improved reliability are accomplished.
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Mase Akira
Takemura Yasuhiko
Uochi Hideki
Yamazaki Shunpei
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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