Method for fabricating a thin film semiconductor

Details Method for fabricating a thin film semiconductor Method for fabricating a thin film semiconductor

1994-07-07

1996-04-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437247, 437978, 148DIG150, H01L 21786

Patent

active

055040195

ABSTRACT:
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.

REFERENCES:
patent: 4634473 (1987-01-01), Swartz et al.
patent: 4675978 (1987-06-01), Swartz
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4963837 (1990-07-01), Konishi et al.
patent: 5064775 (1991-11-01), Chang
patent: 5141885 (1992-08-01), Yoshida et al.
Hatalis, Miltiadis K., et al., "High-Performance Thin-Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films", IEEE, Electron Device Letters, 8(8), Aug. 1987, pp. 361-364.
Little, Thomas W., et al., "Low Temperature Poly-Si TFTs Using Solid Phase Crystallization (SPC) of Very Thin Films and an ECR-CVD Gate Insulator", the Japan Society of Applied Physics, 1991 International Conference on Solid State.

Affiliated with

Also associated with

Rating

Method for fabricating a thin film semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a thin film semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a thin film semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2015942