Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2007-05-01
2007-05-01
Reichard, Dean A. (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S303000, C361S311000, C361S301400, C361S306100, C361S310000, C361S328000
Reexamination Certificate
active
10072339
ABSTRACT:
A method of fabricating high resistivity thin film resistors. An isolation region is formed on a substrate to isolate the active regions. A polysilicon layer is formed above the substrate. A diffusion barrier layer is formed above the polysilicon layer. Lightly doped ions are implanted in the polysilicon layer. The substrate is annealed at a high temperature. The diffusion barrier layer and the polysilicon layer are patterned to form a high-resistive thin film resistor. Spacers are formed on the sidewalls of the high-resistive thin film resistor.
REFERENCES:
patent: 5525831 (1996-06-01), Ohkawa et al.
patent: 5656524 (1997-08-01), Eklund et al.
patent: 5930638 (1999-07-01), Reedy et al.
patent: 6001663 (1999-12-01), Ling et al.
patent: 6069063 (2000-05-01), Chang et al.
patent: 6069398 (2000-05-01), Kadosh et al.
patent: 6096584 (2000-08-01), Ellis-Monaghan et al.
patent: 6096591 (2000-08-01), Gardner et al.
patent: 6100138 (2000-08-01), Tu
patent: 6177327 (2001-01-01), Chao
patent: 6429068 (2002-08-01), Divakaruni et al.
Ha Nguyen T.
J.C. Patents
Reichard Dean A.
United Microelectronics Corp.
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