Method for fabricating a thin film capacitor

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 60, 437919, 257295, 365145, H01L 2170, H01L 2700

Patent

active

053669207

ABSTRACT:
A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.

REFERENCES:
patent: 5081559 (1992-01-01), Fazan et al.
patent: 5192704 (1993-03-01), McDavid et al.
patent: 5227855 (1993-07-01), Momose
By T. Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", IEEE, International Electron Devices Meeting Digest of Technical Papers, 1988, pp. 592-595.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating a thin film capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a thin film capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a thin film capacitor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1991200

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.