Method for fabricating a solid-state image sensing

Details Method for fabricating a solid-state image sensing Method for fabricating a solid-state image sensing

1995-06-05

1996-10-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 3, H01L 3118, H01L 2170, H01L 2700

Patent

active

055653740

ABSTRACT:
A method for fabricating a solid-state image sensing device wherein a plurality of sensor regions are arranged in two-dimensions. A plurality of vertical transfer lines are associated with respective vertical rows of the plurality of sensor regions to transfer signal charges read from the sensor regions. A gate electrode is formed on an insulating layer over a signal charge transfer layer formed at the surface of the substrate. A buffer layer is formed containing hydrogen on an interlayer insulating layer over the gate electrode and the sensor regions. The light shielding layer is formed only over the buffer layer.

REFERENCES:
patent: 5283207 (1994-02-01), Haga et al.
patent: 5432363 (1995-06-01), Kamisaka et al.
patent: 5466612 (1995-11-01), Fuse et al.

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