Method for fabricating a solid imaging device having improved sm

Details Method for fabricating a solid imaging device having improved sm Method for fabricating a solid imaging device having improved sm

1994-10-06

1996-02-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 50, 437195, 437920, 437983, H01L 2170, H01L 2700, H01L 2144, H01L 2148

Patent

active

054928524

ABSTRACT:
The invention provides a method for fabricating a solid imaging device in which an insulation film including at least a silicon oxide film deposited by a chemical vapor deposition method is formed on a surface of the device. An exposed part of the insulation film may be etched prior to forming a shield film, thereby preventing an incident light to enter into all surface of the device except for a photoelectric conversion region.

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patent: 5313081 (1994-05-01), Yamada
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By K. Gundo et al., "1/2" 600 k-Pixel Interline Transfer CCD Image Sensor with Single Poly-Silicon Electrode Structure", Extended Abstracts of the 22nd (1990 International) Conference on Solid SAtate Devices and Materials, 1990, pp. 709-712.

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