Method for fabricating a solid electrolyte memory device and...

Details Method for fabricating a solid electrolyte memory device and... Method for fabricating a solid electrolyte memory device and...

2006-09-29

2010-02-09

Ghyka, Alexander G (Department: 2812)

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

C438S396000, C257SE21008

Reexamination Certificate

active

07658773

ABSTRACT:
A method for fabricating a solid electrolyte memory device comprises a plurality of solid electrolyte memory cells, the solid electrolyte memory cells sharing a common continuous solid electrolyte layer comprising solid electrolyte cell areas and solid electrolyte inter-cell areas, the method comprising the process of introducing mobile ion solubility reducing material or mobile ion mobility reducing material into the solid electrolyte inter-cell areas.

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Kund, M., et al., “Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20nm,” IEEE, 2005, Session 31.5, 4 pages.

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