Method for fabricating a SOI type semiconductor device

Details Method for fabricating a SOI type semiconductor device Method for fabricating a SOI type semiconductor device

1984-11-28

1986-03-18

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576E, 29576T, 148 15, 148175, 148DIG50, 148188, 357 49, H01L 21324, H01L 2136

Patent

active

045759251

ABSTRACT:
A method for fabricating a connection to a deep buried layer of a bipolar transistor based on SOI technology. In such a method, an epitaxial layer is grown on a single crystalline island formed by recrystallizing a polycrystalline layer on an insulating layer. Then the side surface(s) of the epitaxial layer is tentatively exposed and a conduction path along the side surface(s) is formed extending from the upper surface of the epitaxial layer to the single crystalline island thereunder.

REFERENCES:
patent: 3433686 (1969-03-01), Marinace
patent: 3912555 (1975-10-01), Tsuguki
patent: 4224636 (1980-09-01), Yonezawa et al.
patent: 4255209 (1981-03-01), Morcom et al.
patent: 4400411 (1983-08-01), Yuan et al.
patent: 4404738 (1983-09-01), Sasaki et al.
patent: 4463493 (1984-08-01), Momose
patent: 4507158 (1985-03-01), Kamins et al.

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