Method for fabricating a silicon pressure sensor incorporating s

Details Method for fabricating a silicon pressure sensor incorporating s Method for fabricating a silicon pressure sensor incorporating s

1991-06-03

1992-10-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437901, 437966, 437974, 437927, 148DIG12, 148DIG159, 357 26, 73754, H01L 2118, H01L 21302

Patent

active

051550610

ABSTRACT:
A method for fabricating an all silicon absolute pressure sensor employing silicon-on-insulator structures. More particularly, a method for fabricating an all silicon absolute pressure sensor based upon an ungated metal-oxide semiconductor field-effect transistor which offers a high degree of immunity to temperature effects, increased reliability, minimal substrate parasitics, reduced manufacturing variations from device to device, as well as inexpensive and simple fabrication.

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