Method for fabricating a silicon device utilizing ion-implantati

Details Method for fabricating a silicon device utilizing ion-implantati Method for fabricating a silicon device utilizing ion-implantati

1976-02-13

1977-04-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29578, 148174, 148175, 357 49, 357 50, 357 54, 357 59, 357 91, 427 93, 427 94, H01L 2176, H01L 21265

Patent

active

040160076

ABSTRACT:
A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.

REFERENCES:
patent: 3622382 (1971-11-01), Brack et al.
patent: 3666548 (1972-05-01), Brack et al.
patent: 3775191 (1973-11-01), McQuhae
patent: 3853633 (1974-12-01), Armstrong
patent: 3897274 (1975-07-01), Stehlin et al.
patent: 3900350 (1975-08-01), Appels et al.
patent: 3913211 (1975-10-01), Seeds et al.
patent: 3966501 (1976-06-01), Nomura et al.
Chang et al., "Fabrication for Junction Insulating Gate FET" I.B.M. Tech. Discl. Bull., vol. 13, No. 9, Feb. 1971, p. 2503.
Chou, N.J., "Self-Registered Si electrode FET" Ibid., vol. 14, No. 1, June 1971, p. 250.
Bassous, E., "Fabricating Submicrometer Silicon Devices" Ibid., vol. 15, No. 6, Nov. 1972, pp. 1823-1825.

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