Method for fabricating a silicon carbide film to provide improve

Details Method for fabricating a silicon carbide film to provide improve Method for fabricating a silicon carbide film to provide improve

1991-10-09

1992-10-20

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Vacuum treatment of work

264235, 264346, C04B 4100

Patent

active

051567849

ABSTRACT:
A method for radiation hardening by means of a suitable thermal treatment of the membrane material, which in the preferred embodiment is silicon carbide (SiC). The method includes steps of thermally treating a freestanding SiC film (drumlike membrane with a silicon frame) or an unetched film (attached to the silicon wafer throughout its entire area), in an inert atmosphere or vacuum. The temperature for the treatment may range from a couple hundred degrees Celsius to one above the growth temperature. The treatment time, depending on the anneal temperature, can be as short as few minutes or as long as a couple of hours. Optimal anneal times and temperatures will depend on the material and the degree of radiation hardening required. Significant hardening may be achieved even at the lowest temperature.

REFERENCES:
patent: 4543266 (1985-09-01), Matsuo et al.
patent: 4743411 (1988-05-01), Shimada
patent: 4994141 (1991-02-01), Harms

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