Method for fabricating a silicon carbide device

Details Method for fabricating a silicon carbide device Method for fabricating a silicon carbide device

1998-04-06

2000-08-08

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 93, 438483, 438518, H01L 2120

Patent

active

061001112

ABSTRACT:
A method of fabricating a semiconductor device on a substrate, wherein the substrate comprises a first layer of doped silicon carbide of a first conducting type and exhibits at least one hollow defect. In a first step the positions of the hollow defects in the substrate are identified, whereafter a second SiC layer of a second conducting type is formed in contact with the first layer, whereafter the first and second layer constituting the pn junction are provided with at least one edge termination surrounding any hollow defect, whereby the defect is excluded from the high-field region of the device.

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Neudeck et al., Performance Limiting Micropipe Defects in Silicon Carbide Wafers, IEEE Electron Device Letters, vol. 15, No. 2, 1994, pp. 63-65.
Tsvetkov et al., Recent progress in SiC crystal growth, Inst. Phys. Conf. Ser. No. 142; Chapter 1, 1996, pp. 17-22.

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