Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2010-06-14
2011-11-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S149000, C257SE21088
Reexamination Certificate
active
08058149
ABSTRACT:
A method for fabricating a semiconductor on insulator substrate by providing a first semiconductor substrate with a first impurity density of a first impurity type, subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first impurity density in a modified layer adjacent a surface of the first semiconductor substrate being treated, transferring at least partially the modified layer with the reduced first impurity density onto a second substrate, to thereby obtain a modified second substrate, and providing a further layer on a transferred layer of the modified second substrate with the further layer having a second impurity density of a second impurity type that is different than the first impurity type of the transferred modified layer. By doing so, a contamination by dopants of the second impurity type of a fabrication line using semiconductor material with dopants of the first impurity type, can be prevented.
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Ghyka Alexander
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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