Method for fabricating a semiconductor structure having a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Reexamination Certificate

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C117S109000, C117S944000

Reexamination Certificate

active

06241821

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates in general to a method for fabricating a semiconductor structure including a crystalline alkaline earth metal oxide interface between a silicon substrate and other oxides, and more particularly to a method for fabricating an interface including an atomic layer of an alkaline earth metal, silicon, and oxygen.
BACKGROUND OF THE INVENTION
An ordered and stable silicon (Si) surface is most desirable for subsequent epitaxial growth of single crystal thin films on silicon for numerous device applications, e.g., ferroelectrics or high dielectric constant oxides for non-volatile high density memory and logic devices. It is pivotal to establish an ordered transition layer on the Si surface, especially for subsequent growth of single crystal oxides, e.g., perovskites.
Some reported growth of these oxides, such as BaO and BaTiO
3
on Si(100) was based on a BaSi
2
(cubic) template by depositing one fourth monolayer of Ba on Si(100) using reactive epitaxy at temperatures greater than 850° C. See for example: R. McKee et al.,
Appl. Phys. Lett.
59(7), pp 782-784 (Aug. 12, 1991); R. McKee et al.,
Appl. Phys. Lett.
63(20), pp. 2818-2820 (Nov. 15, 1993); R. McKee et al.,
Mat. Res. Soc. Symp
. Proc., Vol. 21, pp. 131-135 (1991); U.S. Pat. No. 5,225,031, issued Jul. 6, 1993, entitled “Process for Depositing an Oxide Epitaxially onto a Silicon Substrate and Structures Prepared with the Process”; and U.S. Pat. No. 5,482,003, issued Jan. 9, 1996, entitled “Process for Depositing Epitaxial Alkaline Earth Oxide onto a Substrate and Structures Prepared with the Process”. However, atomic level simulation of this proposed structure indicates that it likely is not stable at elevated temperatures.
Growth of SrTiO
3
on silicon (100) using an SrO buffer layer has been accomplished. T. Tambo et al.,
Jpn. J. Appl. Phys.
, Vol. 37 (1998), pp. 4454-4459. However, the SrO buffer layer was thick (100 Å), thereby limiting application for transistor films, and crystallinity was not maintained throughout the growth.
Furthermore, SrTiO
3
has been grown on silicon using thick metal oxide buffer layers (60-120 Å) of Sr or Ti. B. K. Moon et al.,
Jpn. J. Appl. Phys
., Vol. 33 (1994), pp. 1472-1477. These thick buffer layers would limit the application for transistors.
SUMMARY OF INVENTION
Therefore, a method for fabricating a thin, stable crystalline interface with silicon is set forth below.


REFERENCES:
patent: 5225031 (1993-07-01), McKee et al.
patent: 5393352 (1995-02-01), Summerfelt
patent: 5450812 (1995-09-01), McKee et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5514484 (1996-05-01), Nashimoto
patent: 5767543 (1998-06-01), Ooms et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 6022140 (2000-02-01), Fraden et al.
patent: 6023082 (2000-02-01), McKee et al.
patent: 4120258 (1992-12-01), None
patent: 8-12494 (1994-06-01), None
patent: 9315897 (1997-12-01), None
“Growth of Crystalline SrTiO3Films on Si Substrates Using Thin Flouride Buffer Layers and Their Electrical Properties”, Bum Ki Moon et al., Jpn. J. Appl. Phys., vol. 33 (1994), pp. 5911-5916.
“Heteroepitaxy of Dissimilar Materials”, Materials Research Society Symposium Proceedings, vol. 221, pp. 29-34.
“Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices”, Materials Research Society Symposium Proceedings, vol. 116, pp. 369-374.
“A Preliminary Consideration of the Growth Behaviour of CeO2,SrTiO3and SrVO3films on Si Substrate”, Hirotoshi Nagata, Thin Solid Films, 224(1993), pp. 1-3.
“Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum”, Hirotoshi Nagata et al., Jpn. J. Appl. Phys., vol. 30 (1991), pp. 1136-1138.
“Heteroepitaxial Growth of SrO films on Si Substrates”, Yuichi Kado et al., J. Appl. Phys. 61(6), 1987, pp.2398-2400.
“Silicon Molecular Beam Epitaxy”, Materials Research Society Symposium Proceedings, vol. 220, pp. 595-600.
“Effects of Buffer Layers in Epitaxial Growth of SrTiO3Thin Film on Si(100)”, Osamu Nkagawara et al., J. Appl. Phys. (1995), pp. 7226-7230.
“A Proposal of Epitaxial Oxide Thin Film Structures for Future Oxide Electronics”, M. Suzuki et al., Materials Science and Engineering B41 (1996), pp. 166-173.
“Crystalline Oxides on Silicon: The First Five Monolayers”, R.A. McKee et al., Physical Review Letters, vol. 81, No. 14, pp. 3014-3017.
“Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide, and Barium Titanate on Silicon”, R.A. McKee et al., Oak Ridge National Laboratory, 1991 American Institute of Physics, pp. 782-784.
“Molecular Beam Epitaxy of SrTiO3Films on Si(100)-2×1 with SrO Buffer Layer”, Toyokazu Tambo et al., Jpn. J. Appl. Phys., vol. 37 (1998) pp. 4454-4459.
“Roles of Buffer Layers in Epitaxial Growth of SrTiO3Films on Silicon Substrates”, Bum Ki Moon et al., Jpn. J. Appl. Phys., vol. 33 (1994) pp. 1472-1477.
“The MBE Growth and Optical Quality of BaTiO3and SrTiO3Thin Films on MgO”, R.A. McKee et al., Mat. Res. Soc. Symp. Proc. vol. 341, pp. 309-314.
“BaSi2and Thin Film Alkaline Earth Silicides on Silicon”, R.A. McKee et al., Appl. Phys. Lett. 63 (20), Nov. 15, 1993, pp. 2818-2820.
“Surface Structures and the Orthorhombic Transformation of Thin Film BaSi2on Silicon”, R. A. McKee et al., Mat. Res. Soc. Symp. Proc., vol. 221., pp. 131-136.
“Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method”, Hiroyuki Mori et al., Jpn. J. Appl. Phys., vol. 30 (1991), pp.1415-1417.
“Molecular Beam Epitaxy of SrTiO3Films on Si(100)-2 × 1 with SrO Buffer Layer”, Toyokazu Tambo et al., Japanese Journal of Applied Physics, vol. 37, No. 1, pp. 4454-4459.
“Roles of buffer Layers in E;itaxial Growth of SrTiO3Films on silicon Substrates”, Bum Ki Moon et al., Japanese Journal of Applied Physics, vol. 33, pp. 1472-1477.

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