Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...
Reexamination Certificate
1999-03-22
2001-06-05
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Using an energy beam or field, a particle beam or field, or...
C117S109000, C117S944000
Reexamination Certificate
active
06241821
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates in general to a method for fabricating a semiconductor structure including a crystalline alkaline earth metal oxide interface between a silicon substrate and other oxides, and more particularly to a method for fabricating an interface including an atomic layer of an alkaline earth metal, silicon, and oxygen.
BACKGROUND OF THE INVENTION
An ordered and stable silicon (Si) surface is most desirable for subsequent epitaxial growth of single crystal thin films on silicon for numerous device applications, e.g., ferroelectrics or high dielectric constant oxides for non-volatile high density memory and logic devices. It is pivotal to establish an ordered transition layer on the Si surface, especially for subsequent growth of single crystal oxides, e.g., perovskites.
Some reported growth of these oxides, such as BaO and BaTiO
3
on Si(100) was based on a BaSi
2
(cubic) template by depositing one fourth monolayer of Ba on Si(100) using reactive epitaxy at temperatures greater than 850° C. See for example: R. McKee et al.,
Appl. Phys. Lett.
59(7), pp 782-784 (Aug. 12, 1991); R. McKee et al.,
Appl. Phys. Lett.
63(20), pp. 2818-2820 (Nov. 15, 1993); R. McKee et al.,
Mat. Res. Soc. Symp
. Proc., Vol. 21, pp. 131-135 (1991); U.S. Pat. No. 5,225,031, issued Jul. 6, 1993, entitled “Process for Depositing an Oxide Epitaxially onto a Silicon Substrate and Structures Prepared with the Process”; and U.S. Pat. No. 5,482,003, issued Jan. 9, 1996, entitled “Process for Depositing Epitaxial Alkaline Earth Oxide onto a Substrate and Structures Prepared with the Process”. However, atomic level simulation of this proposed structure indicates that it likely is not stable at elevated temperatures.
Growth of SrTiO
3
on silicon (100) using an SrO buffer layer has been accomplished. T. Tambo et al.,
Jpn. J. Appl. Phys.
, Vol. 37 (1998), pp. 4454-4459. However, the SrO buffer layer was thick (100 Å), thereby limiting application for transistor films, and crystallinity was not maintained throughout the growth.
Furthermore, SrTiO
3
has been grown on silicon using thick metal oxide buffer layers (60-120 Å) of Sr or Ti. B. K. Moon et al.,
Jpn. J. Appl. Phys
., Vol. 33 (1994), pp. 1472-1477. These thick buffer layers would limit the application for transistors.
SUMMARY OF INVENTION
Therefore, a method for fabricating a thin, stable crystalline interface with silicon is set forth below.
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“The MBE Growth and Optical Quality of BaTiO3and SrTiO3Thin Films on MgO”, R.A. McKee et al., Mat. Res. Soc. Symp. Proc. vol. 341, pp. 309-314.
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“Molecular Beam Epitaxy of SrTiO3Films on Si(100)-2 × 1 with SrO Buffer Layer”, Toyokazu Tambo et al., Japanese Journal of Applied Physics, vol. 37, No. 1, pp. 4454-4459.
“Roles of buffer Layers in E;itaxial Growth of SrTiO3Films on silicon Substrates”, Bum Ki Moon et al., Japanese Journal of Applied Physics, vol. 33, pp. 1472-1477.
Curless Jay A.
Droopad Ravindranath
Hallmark Jerald A.
Ooms William J.
Overgaard Corey Daniel
Koch William E.
Kunemund Robert
Motorola Inc.
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