Method for fabricating a semiconductor structure having...

Details Method for fabricating a semiconductor structure having... Method for fabricating a semiconductor structure having...

2008-09-02

2008-09-02

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S090000, C257SE21356, C257SE21363, C257SE21352

Reexamination Certificate

active

11466259

ABSTRACT:
A method for fabricating a semiconductor structure having selective dopant regions in a semiconductor substrate having trenches formed therein I disclosed. In one embodiment, by a dopant source of an auxiliary structure, parts of the semiconductor structure which lie within the trenches are doped by means of a drive-in. In one embodiment, the semiconductor structure is patterned in planar regions outside the trenches and selectively doped by an implantation process.

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Fu, C.Y. “A Novel Borophosphosilicate Glass Process” IEEE 1985 p. 602-605.

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