Method for fabricating a semiconductor structure

Details Method for fabricating a semiconductor structure Method for fabricating a semiconductor structure

2006-10-27

2008-11-11

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S340000, C438S328000, C438S202000, C257SE21364, C257SE29344

Reexamination Certificate

active

07449389

ABSTRACT:
A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the first epitaxial layer, including configuring the physical dimensions of a first active zone of the first component region independent of a second active zone of the second component region via the first epitaxial layer and the second epitaxial layer. In one embodiment, the first component is a radio-frequency transistor and the second component is a varactor.

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