Method for fabricating a semiconductor structure

Details Method for fabricating a semiconductor structure Method for fabricating a semiconductor structure

1974-07-01

1976-04-13

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 40, C25D 502, C25D 510

Patent

active

039502333

ABSTRACT:
Semiconductor structure formed of a semiconductor body having a planar surface and having regions of first and second conductivity types extending to the surface and with a layer of insulating material formed on the surface. The layer of insulating material has openings formed therein exposing portions of said regions. A lead structure is adherent to the layer of insulating material and extends through the openings to make contact to the portions of the regions so that the regions form parts of an integrated circuit. The lead structure includes a layer of gold having a relatively rough surface with a roughness scale ranging from 10 to 20 microinches so that photoresist will readily adhere thereto.

REFERENCES:
patent: 3449825 (1969-06-01), Loro
patent: 3653999 (1972-04-01), Fuller

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