Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-01-18
2005-01-18
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S257000, C438S396000, C438S947000
Reexamination Certificate
active
06844268
ABSTRACT:
A semiconductor device of the present invention is a semiconductor memory having a charge storage film. Recesses or holes which effectively increase the capacitance of a floating gate or a memory cell capacitor are formed in the charge storage film. These recesses or holes are formed at the same time the floating gate electrode or the lower electrode of the capacitor is isolated into the form of islands. A dielectric film and a polysilicon film is formed on the isolated island floating gate electrodes or lower electrodes. These recesses or holes increase the surface area of the dielectric film and improve the write and erase characteristics of a memory cell.
REFERENCES:
patent: 4570331 (1986-02-01), Eaton, Jr. et al.
patent: 5300802 (1994-04-01), Komori et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5766993 (1998-06-01), Tseng
patent: 6010932 (2000-01-01), Schoenfeld et al.
patent: 60-239994 (1985-11-01), None
patent: 5-055605 (1993-03-01), None
patent: 5-110107 (1993-04-01), None
patent: 5-243515 (1993-09-01), None
patent: 6-282992 (1994-10-01), None
patent: 7-201189 (1995-01-01), None
Wolf, S. and Tauber, R.N., “Silicon Processing for the VLSI Era”, vol. 1, pp. 407-408, 1986.*
Wolf, S., “Silicon Processing for the VLSI Era”, vol. 2, pp. 65 and 203, 1990.
Connolly Bove & Lodge & Hutz LLP
Nippon Steel Corporation
Novacek Christy
Zarabian Amir
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