Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-05-24
2011-05-24
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568
Reexamination Certificate
active
07947571
ABSTRACT:
The invention relates to a method for fabricating a semiconductor on insulator substrate, in particular a silicon on insulator substrate by providing a source substrate, providing a predetermined splitting area inside the source substrate by implanting atomic species, bonding the source substrate to a handle substrate, detaching a remainder of the source substrate from the source-handle component at the predetermined splitting area to thereby transfer a device layer of the source substrate onto the handle substrate, and thinning of the device layer. To obtain semiconductor on insulator substrates with a reduced Secco defect density of less than 100 per cm2the implanting is carried out with a dose of less than 2.3×106atoms per cm2and the thinning is an oxidation step conducted at a temperature of less than 925° C.
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Abbadie Alexandra
Capello Luciana
Kononchuk Oleg
Neyret Eric
Schwarzenbach Walter
S.O.I. TEC Silicon on Insulator Technologies
Shook Daniel
Smith Matthew
Winston & Strawn LLP
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