Fishing – trapping – and vermin destroying
Patent
1994-07-19
1995-04-04
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 60, 437919, H01L 2170, H01L 2700
Patent
active
054037662
ABSTRACT:
A semiconductor memory device having stacked-capacitor type memory cells, each of which contains an MOS transistor and a storage capacitor. The capacitor has a first opposed electrode having a recess at its upper face, which is formed through an inter-layer insulation film on the substrate, a first insulation film which covers a surface of the first opposed electrode, a charge storage electrode formed in the recess of the first opposed electrode and contacted with the source region of the transistor through a contact hole of the inter-layer insulation film, a second insulation film which covers a surface of the charge storage electrode, and a second opposed electrode formed on the second insulation film. The charge storage electrodes do not broken in the fabrication sequence of the device. Even if the charge storage electrodes are sheered off in positioning to the corresponding contact holes, the inter-layer insulation film is disadvantageously etched.
REFERENCES:
patent: 5235199 (1993-08-01), Hamamoto et al.
patent: 5236859 (1993-08-01), Bae et al.
patent: 5326714 (1994-07-01), Liu et al.
Chaudhuri Olik
NEC Corporation
Tsai H. Jey
LandOfFree
Method for fabricating a semiconductor memory device having stac does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a semiconductor memory device having stac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor memory device having stac will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2380342