Method for fabricating a semiconductor laser diode

Details Method for fabricating a semiconductor laser diode Method for fabricating a semiconductor laser diode

1995-11-20

1998-01-13

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437126, 437130, H01L 2120

Patent

active

057078920

ABSTRACT:
A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.

REFERENCES:
patent: 4558448 (1985-12-01), de Poorter et al.
patent: 4677634 (1987-06-01), Meuleman et al.
patent: 4904617 (1990-02-01), Muschke
patent: 5413956 (1995-05-01), Watanabe et al.
patent: 5436196 (1995-07-01), Miyashita

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor laser diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor laser diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor laser diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-325790