Method for fabricating a semiconductor laser device using (Al.su

Details Method for fabricating a semiconductor laser device using (Al.su Method for fabricating a semiconductor laser device using (Al.su

1991-11-29

1993-03-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 148DIG95, 372 45, 257 79, H01L 2120, H01L 21203, H01L 21205

Patent

active

051944006

ABSTRACT:
A method for fabricating an AlGaInP-based visible light laser device by molecular beam epitaxy is described. In this method, a upper clad layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P wherein x and y are, respectively, in the ranges of from 0.5 to 1 and from 0.47 to 0.53 is covered with a protective layer serving also as an etching prevenive layer so that a grooved-type structure using the (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P clad layer can be fabricated without involving degradation of the clad layer by contamination with oxygen, nitrogen and the like.

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"Development of Semiconductor Lasers by a Production-Type MBE" by H. Tanaka et al.; Applied Phisics, vol. 54, No. 11 (1985).

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