Method for fabricating a semiconductor laser device in which the

Details Method for fabricating a semiconductor laser device in which the Method for fabricating a semiconductor laser device in which the

1991-06-05

1993-03-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437107, 437133, 372 45, 257 18, H01S 319, H01L 21203

Patent

active

051908913

ABSTRACT:
A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P, wherein 0.4 .ltoreq.X.ltoreq.1. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P, wherein 0.ltoreq.y.ltoreq.0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 .mu.m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 .mu.m/hour.

REFERENCES:
patent: 4901326 (1990-02-01), Hayakawa et al.
patent: 4922499 (1990-05-01), Nitta et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 4982409 (1991-01-01), Kinoshita et al.
patent: 4987096 (1991-01-01), Ishikawa et al.
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5048035 (1991-09-01), Sugawara et al.
"Strong Ordering in GaInP Alloy Semiconductors: Formation Mechanism for the Ordered Phase" by T. Suzuki et al; Journal of Crystal Growth 93 (1988) pp. 396-405.
"661.7 nm Room-Temperature CW Operation of AlGaInP Double-Heterostructure Lasers with Aluminium-Containing Quaternary Active Layer" by K. Kobayashi et al, Electronics Letters, vol. 21, No.4, Nov. 21, 1985, pp. 1162-1163.
"0.66 .mu.m Room-Temperature Operation of InGaAIP DH Laser Diodes Grown by MBE" by Y. Kawamura et al, Electronics Letters, vol. 19, No. 5, Mar. 3, 1983, pp. 163-165.
"Modular Beam Epitaxial Growth of AlGaInP on (100) GaAs" by T. Hayakawa, et al, Journal of Crystal Growth, vol. 95, No. 1-4, Feb. 1989, pp. 343-347.
"Evidence for the existence of an ordered state in GaInP grown by metalorganic vapor phase epitaxy and its relation to band-gap energy" by A. Gomyo, et al, Applied Physics Letters, vol. 50, No. 11 Mar. 16, 1987, pp. 673-675.

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