Method for fabricating a semiconductor laser device

Details Method for fabricating a semiconductor laser device Method for fabricating a semiconductor laser device

1987-02-27

1988-02-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437 90, 437126, 437236, 372 44, H01S 318, H01S 300, H01L 3300

Patent

active

047254505

ABSTRACT:
A semiconductor laser device is fabricated by forming a first semiconductor layer of N type GaAs to be a current narrowing layer on a P type GaAs semiconductor substrate, forming a second semiconductor layer of P type AlGaAs on the first semiconductor layer, removing said second semiconductor layer by etching except the proximity of the portion to be the end surface of a resonator, forming a striped groove which is deep enough to penetrate the first semiconductor layer and extends to that direction which crosses the surface to be the end surface of the resonator and, depositing a lower clad layer, an active layer, an upper layer and a contact layer in this order.

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patent: 4637122 (1987-01-01), Camey et al.
Appl. Phys. Lett. 37(1) Jul. 1980, "Reduction of GaAs Diode Laser Spontaneous Emission" by W. Streifer et al., pp. 10-12.
Appl. Phys. Lett., 40, Jun. 15, 1982, "Large Optical Cavity AlGaAs Buried Heterostructure Window Lasers", by H. Blauvelt et al.

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