Method for fabricating a semiconductor integrated circuit device

Details Method for fabricating a semiconductor integrated circuit device Method for fabricating a semiconductor integrated circuit device

1992-08-14

1994-01-04

Quach, T. N.

Fishing, trapping, and vermin destroying

437 40, 437 52, 437228, 437978, 437984, 437982, 156644, 156653, H01L 21283, H01L 2131

Patent

active

052759725

ABSTRACT:
A fabrication method for a semiconductor integrated circuits which permits the self-aligned formation of contact windows without causing shorts or breaks in the interconnecting lines in the device is provided. After forming gate electrodes and source/drain regions of transistors on a semiconductor substrate, an etch-stop layer and a BPSG film are successively deposited over the gate electrodes and the source/drain regions. After a resist having a contact window pattern is formed on the BPSG film, an isotropic dry etching using a microwave plasma is performed to etch the BPSG film. According to the isotropic dry etching, the laterally etching rate in the BPSG film can be controlled by adjusting the RF power, and a silicon dioxide film can be used as the etch stop layer. After the BPSG flow process, the etch stop layer on the contact region is etched away to form contact windows.

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