Method for fabricating a semiconductor film which is electricall

Details Method for fabricating a semiconductor film which is electricall Method for fabricating a semiconductor film which is electricall

1989-12-06

1991-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437100, 437947, 148DIG135, H01L 21302, H01L 2120

Patent

active

049977873

ABSTRACT:
A method for fabricating a crystal imperfection free silicon carbide (SiC) film electrically insulated from silicon substrate. A SiC film is heteroepitaxially grown over a silicon substrate, and set into a jig made of Teflon. The jig holds the substrate by its periphery, and exposes the bottom surface of the substrate which is opposite to the SiC film. The semiconductor substrate is etched off from its bottom side, and the lower surface of the SiC film is exposed. Silicon dioxide film is deposited to the lower surface of the SiC film and a second silicon substrate is adhered to the silicon dioxide film by applying pulse voltage. The surface of the SiC film fabricated in this way is never contacted to the silicon substrate, therefore, it is free from the crystal imperfections which occurs close to the contact surface to the silicon substrate. Accordingly, the SiC film formed in such a way is desirable for fabricating semiconductor devices.

REFERENCES:
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patent: 4142925 (1979-03-01), King et al.
patent: 4512825 (1985-04-01), Addamiano et al.
patent: 4891329 (1990-01-01), Reisman et al.
J. J. Cuomo and R. F. Rutz, IBM Tech. Disc. Bul. "Growing Silicon Carbide and Aluminum Nitride Crystals", vol. 17, No. 9, Feb. 1975, p. 2817.

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