Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-05-16
2006-05-16
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S613000, C228S180220, C029S884000, C257S780000
Reexamination Certificate
active
07045389
ABSTRACT:
A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.
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“Micro-ball Bump Technology for Fine-pitch Interconnections”, Shimokawa K; Tatsumi K; Hashino E; Ohzeki Y; Konda M; Kawakami Y; Conference Proceedings Article 1st1997 IEMT/IMC Symposium (IEEE Cat. No. 97CH36059), Proceedings of 1997 First International Electronic Manufacturing Technology (IEMT) IMC Symposium, Tokyo, Japan, Apr. 16-18, 1997; ISBN 0-7803-4235-6, pp. 105-109.
Hashino Eiji
Shimokawa Kenji
Tatsumi Kohei
Chambliss Alonzo
Kenyon & Kenyon
Nippon Steel Corporation
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