Fishing – trapping – and vermin destroying
Patent
1994-02-15
1995-04-18
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437933, 437952, 148DIG24, H01L 21265
Patent
active
054078385
ABSTRACT:
A method for fabricating a semiconductor device including carrying out an ion implantation into a predetermined region of a single-crystal silicon substrate to form therein an amorphized ion-implanted layer according to any one of the methods: (A) implanting an ion of an atom serving as carrier into the predetermined region, followed by implanting an ion of an electrically inert atom or molecule into the region, (B) implanting an ion of an electrically inert atom or molecule in the region, followed by implanting an ion of an atom serving as carrier in the region, and (C) implanting an ion of a molecule in which an atom serving as carrier is bonded to an electrically inert atom; annealing the substrate in an inert atmosphere to crystallize the amorphized ion-implanted layer again; and further annealing the substrate in an oxidizing atmosphere to eliminate defects at the interface of the substrate and the ion implantation layer.
REFERENCES:
patent: 3925106 (1975-12-01), Ku et al.
patent: 4187125 (1980-02-01), Feist
patent: 4584026 (1986-04-01), Wu et al.
patent: 5015593 (1991-05-01), Yawata et al.
patent: 5126278 (1992-06-01), Kodaira
Naruse Kazushi
Ohnishi Tetsuya
Chaudhari Chandra
Hearn Brian E.
Sharp Kabushiki Kaisha
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