Method for fabricating a semiconductor device using a catalyst i

Details Method for fabricating a semiconductor device using a catalyst i Method for fabricating a semiconductor device using a catalyst i

1994-12-16

1997-12-09

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 40, 437174, 437233, 437913, 148DIG16, H01L 2184

Patent

active

056960034

ABSTRACT:
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

REFERENCES:
patent: 3783049 (1974-01-01), Sandera
patent: 4068020 (1978-01-01), Reuschel
patent: 4309223 (1982-01-01), Shibata
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5569610 (1996-10-01), Zhang et al.
C. Hayzelden et al., J. Appl. Phys., 73, 12 (1993) 8279 ". . . Crystallization of Ni-Implanted a-Si Thin Films".
J.J.P. Bruines, et al., Appl. Phys. Lett., 50 (1987) 507 ". . . Pulsed Laser Annealing of a-Si".
C. Hayzelden et al., Appl. Phys. Lett., 60, 2 (1992) 225 ". . . TEM Studies of Silicide Mediated Crystallization of a-Si".
T. Hempel, et al., Solid State Comm., 85, 11 (1993) 921 "Needle-like Crystallization of Ni Doped a-Si Thin Films".
Choi et al, "The Effects of Grain Boundary on Excimer-Laser-Crystallized Poly-Si TFT Characteristics", Extended Abstract of Applied Physics Society, vol. 2, 1993.
J. Stoemnos et al. Appl. Phys. Lett., 58(11) (1991) 1196,"Crystallization of amorphous Si . . . ", Mar. 1991.

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