Method for fabricating a semiconductor device using a BPSG layer

Details Method for fabricating a semiconductor device using a BPSG layer Method for fabricating a semiconductor device using a BPSG layer

1988-09-27

1989-11-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437240, 437982, 148DIG133, H01L 2190

Patent

active

048792535

ABSTRACT:
A method for forming a smooth borophosphosilicate glass film on a semiconductor substrate is described, in which a semiconductor substrate having at least one stepped portion thereon is formed with one side of the substrate a borophosphosilicate glass layer having a defined boron content and a defined phosphorus content with a defined total content of the boron and phosphorus. The layer is subjected to thermal treatment under conditions of a temperature of not lower than 940.degree. C. and a time of not shorter than 15 minutes in an atmospheric gas supplied at a flow rate of not lower than 19 liters/minute. As a result, the BPSG glass layer is smoothed on the surface thereof without formation of undesirable grains on the surface. This thermal treatment is particularly suitable for fabrication of a semiconductor element or device using an insulating film of the borophosphosilicate glass.

REFERENCES:
patent: 4535528 (1985-08-01), Chen et al.
patent: 4740480 (1988-04-01), Ooka
patent: 4740483 (1988-04-01), Tobin
Levy et al, "Viscous Behavior of Phosphosilicate and Borophosphosilicate Glasses in VLSI Processing", Solid State Technology, Oct. 1986, pp. 123-130.
Kern et al, "Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications", RCA Review, vol. 43, Sep. 1982, pp. 423-457.
Kern et al, "Optimized Chemical Vapor Deposition of Borophosphosilicate Glass Films", RCA Review, vol. 46, Jun. 1985, pp. 117-152.
"Solid State Technology, the Japanese edition, Dec. 1986, pp. 54-59".
"J. Electrochem. Soc., Solid-State Science and Technology", pp. 1517-1518, Jul. 1986, vol. 133, No. 7.

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