Method for fabricating a semiconductor device including a step f

Details Method for fabricating a semiconductor device including a step f Method for fabricating a semiconductor device including a step f

1995-11-17

1998-12-01

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438398, 438901, H01L 2120

Patent

active

058438297

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.

REFERENCES:
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4748133 (1988-05-01), Griswold
patent: 4814291 (1989-03-01), Kim et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5223080 (1993-06-01), Ohta et al.
patent: 5238849 (1993-08-01), Sato
patent: 5315140 (1994-05-01), Sugahara et al.
patent: 5422287 (1995-06-01), So
patent: 5480826 (1996-01-01), Sugahara et al.
patent: 5514880 (1996-05-01), Nishimura et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5563093 (1996-10-01), Koda et al.
Campo et al., Poly-Si thin film transistors fabricated with rapid thermal processing, Rapid Thermal and Integrated Processing II, Eds. Gelpey et al., Meter. Res. Soc., pp. 389-394, Apr. 12, 1993.
Wolf s. and R. N. Tauber, "Silicon Processing for the VLSI Era", vol. 1, p. 184, 1986.

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor device including a step f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor device including a step f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor device including a step f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395385