Method for fabricating a semiconductor device including a semi-i

Details Method for fabricating a semiconductor device including a semi-i Method for fabricating a semiconductor device including a semi-i

1991-01-25

1992-07-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 94, 156613, 148DIG41, 148DIG110, H01L 2118, H01L 2120, C30B 0000

Patent

active

051282755

ABSTRACT:
A method for fabricating a compound semiconductor device having a semi-insulating layer of a group III-V compound semiconductor material that contains arsenic as a group V element. The method includes a step of growing the semi-insulating layer from a source gas of the group V element that contains both arsine and an organic compound of arsenic, wherein arsine and the organic compound of arsenic are used simultaneously with a mixing ratio to achieve a desired high resistivity in the semi-insulating layer.

REFERENCES:
patent: 4368098 (1983-01-01), Munasevit
patent: 4689094 (1987-08-01), Van Rees et al.
patent: 4935381 (1990-06-01), Speckman et al.
Hong H. Lee; Fundamentals of Microelectronics Processing; McGraw-Hill Pub. Co. (1990) pp. 3-7, Section 1.2 "Semiconductors and Charge Carriers".
C. H. Chen, et al. "Use of tertiarybutylarsine for GaAs growth", Appl. Phys. Lett. 50 (4) Jan. 26, 1987, pp. 218-220.
R. M. Lum, et al. "Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs", Appl. Phys. Lett. 50, (5), Feb. 2, 1987 pp. 284-286.
D. M. Speckman & J. P. Wendt "Triethylarsenic and Arsine as Co-Reagents: The Novel Manipulation of In-Situ GaAs OMCVD Growth Chemistry to Improve Growth Efficiency and Safety" Journal of Crystal Growth 93 (1988) 29-33.
T. Okabe "Growth temperature dependence of ELZ concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine" J. Appl. Phys. 68 (8), Oct. 15, 1990 pp. 4064-4067.

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