Method for fabricating a semiconductor device having vertical an

Details Method for fabricating a semiconductor device having vertical an Method for fabricating a semiconductor device having vertical an

1997-12-16

2000-11-21

Chaudhuri, Olik

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

438358, 438369, 438370, H01L 21331

Patent

active

061502251

ABSTRACT:
A semiconductor device has a P type semiconductor substrate 1, a vertical type bipolar transistor having an N type base region 4, a lateral type bipolar transistor having an N type base region 4 formed on the semiconductor substrate 1, an N type collector region 7a, and an N type emitter region 8, and a P type insulating diffusion region 7b for isolating between vertical and lateral type bipolar transistors, at least one of collector and emitter regions of the lateral bipolar transistor having substantially same depth of the insulating diffusion region 7b.

REFERENCES:
patent: 4087900 (1978-05-01), Yiannoulos
patent: 4940671 (1990-07-01), Small et al.
patent: 5141881 (1992-08-01), Takeda et al.
patent: 5163178 (1992-11-01), Gomi et al.
patent: 5347156 (1994-09-01), Sakaue

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