Fishing – trapping – and vermin destroying
Patent
1991-05-03
1994-01-18
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 33, 437 44, 437162, H01L 21331, H01L 21225
Patent
active
052799760
ABSTRACT:
A method is provided for the formation of ultra-shallow boron doped regions in a semiconductor device. In one embodiment of the invention an N-type semiconductor substrate (15) is provided having a first P-type region formed therein. A dielectric layer (16) is formed on the substrate surface and a material layer (17) doped with fluorinated boron is formed on the dielectric layer (16). A second P-type region (22), characterized by a high dopant concentration at the substrate surface and a uniform junction profile, is formed in the substrate adjacent to the first P-type region by diffusing boron atoms from the material layer (17) through the dielectric layer (16) and into the substrate (15). The second P-type region (22) has a very shallow junction depth which is closer to the substrate surface than the first P-type region.
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Burnett David
Hayden James D.
Pfiester James R.
Clingan Jr. James L.
Dockrey Jasper W.
Motorola Inc.
Wilczewski Mary
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