Method for fabricating a semiconductor device having a shallow d

Details Method for fabricating a semiconductor device having a shallow d Method for fabricating a semiconductor device having a shallow d

1993-09-20

1995-04-18

Fourson, George

Fishing, trapping, and vermin destroying

437162, 437954, H01L 21336

Patent

active

054078474

ABSTRACT:
A method is provided for the formation of ultra-shallow boron doped regions in a semiconductor device. In one embodiment of the invention an N-type semiconductor substrate (15) is provided having a first P-type region formed therein. A dielectric layer (16) is formed on the substrate surface and a material layer (17) doped with fluorinated boron is formed on the dielectric layer (16). A second P-type region (22), characterized by a high dopant concentration at the substrate surface and a uniform junction profile, is formed in the substrate adjacent to the first P-type region by diffusing boron atoms from the material layer (17) through the dielectric layer (16) and into the substrate (15). The second P-type region (22) has a very shallow junction depth which is closer to the substrate surface than the first P-type region.

REFERENCES:
patent: 4502202 (1985-03-01), Malhi
patent: 5141895 (1992-08-01), Pfiester et al.
patent: 5153146 (1992-10-01), Toyoshima et al.
Wolf, S. and R. Tauber, "Silicon Processing for the VLSI Era", Lattice Press, Sunset Beach, CA, vol. 1 p. 264, 1986.

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