Method for fabricating a semiconductor device having a conductor

Details Method for fabricating a semiconductor device having a conductor Method for fabricating a semiconductor device having a conductor

1991-10-22

1994-08-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437198, 437200, 437230, 437247, H01L 2144, H01L 2148

Patent

active

053428064

ABSTRACT:
A semiconductor device composed of: a substrate having a doped semiconductor region, a gate wiring, a lower conductor structure, an insulating layer overlying the lower structure and having at least one through opening extending to the lower conductor structure, and an upper conductor structure connected to the lower conductor structure via the through opening, wherein at least one of the conductor structures is formed of at least one layer of a metal, a metal silicide, a metal nitride, a metal carbide or a conductive oxide film, and a metal plating layer disposed on and adhering to the at least one layer.

REFERENCES:
patent: 4113578 (1978-09-01), Del Monte
patent: 4162781 (1980-01-01), Hooper et al.
patent: 4593454 (1986-06-01), Baudrant et al.
patent: 4619887 (1986-10-01), Hooper
patent: 4672419 (1987-01-01), McDavid
patent: 4725877 (1988-02-01), Brasen et al.
patent: 4761677 (1988-08-01), Sasaki
IBM Technical Disclosure Bulletin, "Electromigration improvement of Al-Cu or Au Conductors," vol. 21 No. 12, May 1979, by J. K. Howard.

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