Method for fabricating a semiconductor device having a capacitor

Details Method for fabricating a semiconductor device having a capacitor Method for fabricating a semiconductor device having a capacitor

1993-07-23

1995-01-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053858590

ABSTRACT:
A method for fabricating a semiconductor device includes steps of: (a) forming a MIS type transistor having a gate electrode and a first source/drain region and a second source/drain on a semiconductor substrate, (b) forming a contact hole by causing an insulating layer and a pad material layer to grow over the semiconductor substrate. and removing selectively the insulating layer and the pad material layer to expose the first source/drain regions, (c) forming a conductive plug, which fills inside the contact hole, by forming a first conductive material layer and etching back this layer in such a way as to leave this layer only in the contact hole, and (d) forming a capacitor which has a first electrode being in contact with the conductive plug and extending in a cantilever-like form from the conductive plug, a dielectric film covering a surface of the first electrode, and a second electrode surrounding the first electrode through the dielectric film. In view of the presence of the conductive plug, the physical strength of the first electrode is enhanced and hence the production yield is enhanced.

REFERENCES:
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5134086 (1992-07-01), Ahn
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5175121 (1992-12-01), Choi et al.
patent: 5192703 (1993-03-01), Lee et al.

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