Method for fabricating a semiconductor device by high energy ion

Details Method for fabricating a semiconductor device by high energy ion Method for fabricating a semiconductor device by high energy ion

1992-01-16

1995-07-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 24, 437 26, 437 30, 437 31, 437 32, 437 34, H01L 2122

Patent

active

054361761

ABSTRACT:
A semiconductor device having superior electrical characteristics is fabricated. 50 nm of the surface of a CZ (100) silicon substrate is oxidized to form an oxidized film. Afterwards a first ion implantation of boron ions is conducted to this silicon substrate amounting to 7.times.10.sup.13 cm.sup.-2 with acceleration energy of 1.5 MeV. Next, a first annealing in nitrogen ambient at 1050.degree. C. for 40 minutes is conducted. Through this ion implantation process a damaged layer and a dopant layer are formed within the silicon substrate. Boron ions are implanted as a second ion implantation, with a dosage of 7.times.10.sup.13 cm.sup.-2, followed by a second implanted annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. Further, as a third ion implantation, boron ions are implanted with a dosage of 6.times.10.sup.13 cm.sup.-2 followed by a third annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. In the dopant layer thus formed, through a plurality of repeated high energy ion implantation and subsequent annealing, in order to obtain the desired dopant concentration, density of secondary defect occurrences may be lowered.

REFERENCES:
patent: 3897276 (1975-07-01), Kondo
patent: 4045251 (1977-08-01), Graul et al.
patent: 4369072 (1983-01-01), Bakeman, Jr. et al.
patent: 4584026 (1986-04-01), Wu et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 4996164 (1991-02-01), Habitz et al.

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