Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-04-17
1980-12-16
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 148174, 148187, 148191, 156628, 156649, 156657, 156662, 357 23, 357 24, 357 59, 427 85, 427331, 427333, 4273722, H01L 21225, H01L 2131
Patent
active
042395593
ABSTRACT:
A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.
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patent: 4084987 (1978-04-01), Godber
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Hitachi , Ltd.
Rutledge L. Dewayne
Saba W. G.
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