Method for fabricating a semiconductor device by co-diffusion of

Details Method for fabricating a semiconductor device by co-diffusion of Method for fabricating a semiconductor device by co-diffusion of

1983-08-18

1986-05-20

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577C, 148190, H01L 21385

Patent

active

045899363

ABSTRACT:
A semiconductor device is fabricated by selectively providing on a surface of a semiconductor body a plurality of impurity diffusion sources each containing an n-type impurity comprising phosphorus and arsenic, at least two of said impurity diffusion sources containing phosphorus and arsenic at a different ratio. The impurity is diffused by a single thermal diffusion step from each impurity diffusion source into the semiconductor body to form a plurality of n-type regions in the semiconductor body. At least two of the n-type regions will then have different diffusion depths.

REFERENCES:
patent: 3748198 (1973-07-01), Basi et al.
patent: 3834953 (1974-09-01), Nakamura et al.
patent: 3852127 (1974-12-01), Lamming
patent: 3879230 (1975-04-01), Nakamura et al.
patent: 4226650 (1980-10-01), Takahashi et al.
patent: 4261765 (1981-04-01), Komatsu et al.
patent: 4263067 (1981-04-01), Takahashi et al.
patent: 4272304 (1981-06-01), Komatsu
patent: 4296426 (1981-10-01), Gilles
patent: 4375999 (1983-03-01), Nawata et al.

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor device by co-diffusion of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor device by co-diffusion of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor device by co-diffusion of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2106951