Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-02-26
2009-11-03
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000, C257S103000, C257SE33067
Reexamination Certificate
active
07612381
ABSTRACT:
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
REFERENCES:
patent: 5766968 (1998-06-01), Armacost et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 6465808 (2002-10-01), Lin
patent: 6623998 (2003-09-01), Shibata et al.
patent: 6821804 (2004-11-01), Thibeault et al.
patent: 6825056 (2004-11-01), Asakawa et al.
patent: 7053420 (2006-05-01), Tadatomo et al.
patent: 7154121 (2006-12-01), Hsieh et al.
patent: 2001/0010941 (2001-08-01), Morita
patent: 2002/0195609 (2002-12-01), Yoshitake et al.
patent: 2003/0178626 (2003-09-01), Sugiyama et al.
patent: 2003/0181057 (2003-09-01), Sakai et al.
patent: 2004/0227446 (2004-11-01), Fujimoto et al.
patent: 2005/0006651 (2005-01-01), LeBoeuf et al.
patent: 2006/0102914 (2006-05-01), Smits et al.
patent: 2003-086835 (2003-03-01), None
patent: 2003-174191 (2003-06-01), None
patent: 2003-218383 (2003-07-01), None
patent: 2003-258296 (2003-09-01), None
Tada, Tetsuya, Kanayama, Toshihiko, “Regular array of Si nanopillars fabricated using metal clusters”, Sep. 16, 1998, American Vacuum Society, JVST B, Nov./Dec. 1998, pg. 3934-3937.
The extended European search report includes, pursuant to Rule 62 EPC, the supplementary European search report (Art 1.53(7) EPC) and the European search opinion.
Huh C., et al: “Enhanced performances of InGaN-based light-emitting diode by a micro-roughened p-GaN surface using metal clusters”, SPIE 2002.
Huh C., et al: “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface”, Journal of Applied Physics Jun. 2003.
Ovchinnikov V., et al: “Silicon Nanopillars Formed by Reactive Ion Etching Using a Self-Organized Gold Mask”, IEEE 2005.
Malinin A. A., et al: “Nanostructure fabrication process for optoelectronic application”, SPIE 2000.
Aggarwal S, et al: “Oxide nanostructures through self-assembly”, Applied Physics Letters Mar. 2001.
Chu J. T., et al: “Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nano-Roughened p-GaN Surface”, Physics Scripta 1999.
International Search Report for PCT/JP2005/015530 dated Nov. 22, 2005.
Akasaki Isamu
Amano Hiroshi
Iwaya Motoaki
Kamiyama Satoshi
Kasugai Hideki
Ganjian Peter
Meijo University
Purvis Sue
Stowe Scott
Yokoi & Co. U.S.A., Inc.
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