Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Patent
1997-11-05
1999-03-16
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
438 38, 438 45, 438 46, H05L 2120
Patent
active
058829482
ABSTRACT:
A method for fabricating a semiconductor device is provided in which a first layer having a first conductivity type is grown, a current aperture region comprising at least one layer of an oxidizable material is grown, a second layer is grown, an impurity material is diffused through a first region of the layer of oxidizable material to decrease the susceptibility to oxidation in the first region and to provide a conductive channel through the layer of oxidizable material, the semiconductor device is etched to expose a sidewall of the oxidizable layer, and the oxidizable layer is oxidized in a region outside of the first region to form an oxidized region while leaving at least a portion of the first region non-oxidized to form a current aperture in the oxidizable layer.
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Mulpuri S.
Niebling John F.
Picolight, Inc.
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