Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2007-06-20

2009-10-27

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S009000, C257SE21007, C257SE21227, C257SE21231, C257SE21249

Reexamination Certificate

active

07608546

ABSTRACT:
A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.

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