Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2005-01-31
2008-07-01
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S476000, C438S513000, C438S514000, C438S795000, C250S42300F, C250S424000
Reexamination Certificate
active
07393761
ABSTRACT:
A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.
REFERENCES:
patent: 6383880 (2002-05-01), Ngo et al.
patent: 2002/0100924 (2002-08-01), Rhodes
patent: 2002/0121345 (2002-09-01), Chen et al.
patent: 2003/0031794 (2003-02-01), Tada et al.
patent: 2003/0042558 (2003-03-01), Noguchi et al.
patent: 2004/0241968 (2004-12-01), Murakawa et al.
patent: 2005/0106797 (2005-05-01), Colombo
patent: 2005/0158957 (2005-07-01), Hwang et al.
patent: 2005/0161434 (2005-07-01), Sugawara et al.
patent: 2005/0205947 (2005-09-01), Yu et al.
Rubin, L., and Poate, J., “Ion Implantation in Silicon Technology,”The Industrial Physicist, Jun./Jul. 2003, pp. 12-15.
Michaelides, A., Hu, P., Lee, M.-H., Alavi, A, and King, D.A., “Resolution of an Ancient Surface Science Anomaly: Work Function Change Induced by N Adsorption on W{100},”Physical Review Letters, Jun. 20, 2003, vol. 90, No. 24, pp. 246103-1-246103-4.
Leusink Gert
Wajda Cory
Lee Hsien-ming
Tokyo Electron Limited
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