Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2005-06-21

2005-06-21

Pham, Hoa (Department: 2814)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C257S758000, C257S759000

Reexamination Certificate

active

06908793

ABSTRACT:
A process for fabricating a semiconductor device having, for example, a MISFET transistor, is provided which comprises the steps of (a) providing a partially fabricated semiconductor device comprising a substrate and a first and second polysilican layer insulatively spaced from the substrate by an insulating layer, the insulating layer having an opening therein which exposes the surface of the first polysilicon layer positioned below the second polysilicon layer and (b) exposing the partially fabricated semiconductor device to a noble gas halide to substantially remove the first polysilicon layer.

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